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MOSFET N/P-CH 20V 3A/2.2A SSOT-6,                                                                

FET Type N and P-Channel

FET Feature Logic Level Gate

Drain to Source Voltage (Vdss) 20V

Current - Continuous Drain (Id) @ 25°C 3A, 2.2A

Rds On (Max)  Id, Vgs 70 mOhm @ 3A, 4.5V

Vgs(th) (Max)  Id 1.5V @ 250µA

Gate Charge (Qg)  Vgs 4.6nC @ 4.5V

Input Capacitance (Ciss) @ Vds 324pF @ 10V

Power - Max 700mW

Package / Case SOT-23-6 Thin, TSOT-23-6

data sheet

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